Experiment #5 – Gate Driver High-Side and Low-Side Switches

ثبت نشده
چکیده

A low-side switch is a MOSFET or an IGBT that is connected to the ground-referenced and is not floating. In a boost converter, the source terminal of the MOSFET is connected to the circuit ground, which is referred to a low-side MOSFET. To switch an N-channel MOSFET of a boost converter on, the V should be in the order of 10 to 20V. Since the source terminal is grounded, this implies that the gate voltage must be 10 to 20V. This voltage level can be easily generated by having the input voltage of the boost converter and does not pose any challenge for gate driver circuit.

برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

ثبت نام

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

منابع مشابه

Simulation Analysis of an Effective Gate Drive Scheme for a New Soft-Switched Synchronous Buck Converter

This paper proposes a new resonant gate driver circuit for a soft switching synchronous buck converter in a fixed load condition. The switching energy can be fully recovered during current commutation phase in the gate driver while the diode conduction losses in the low and high side switches can be substantially reduced by employing additional L and C resonant in the circuit. Using PSpice simu...

متن کامل

The Analysis of Dead Time on Switching Loss in High and Low Side MOSFETs of ZVS Synchronous Buck Converter

This work is about the analysis of dead time variation on switching losses in a Zero Voltage Switching (ZVS) synchronous buck converter (SBC) circuit. In high frequency converter circuits, switching losses are commonly linked with high and low side switches of SBC circuit. They are activated externally by the gate driver circuit. The duty ratio, dead time and resonant inductor are the parameter...

متن کامل

Design and Analysis of New Level Shifter With Gate Driver for Li-Ion Battery Charger in 180nm CMOS Technology

In this work, the design and analysis of new Level Shifter with Gate Driver for Li-Ion battery charger is proposed for high speed and low area in 180nm CMOS technology. The new proposed level shifter is used to raise the voltage level and significantly reduces transfer delay 1.3ns (transfer delay of conventional level shifter) to 0.15ns with the same input signal. Also, the level shifter with g...

متن کامل

A High-Temperature, High-Voltage Linear Regulator in 0.8-μm BCD-on-SOI

The sale of hybrid electric vehicles (HEVs) has increased 10 fold from the year 2001 to 2008 [1]. Thus, high temperature electronics for HEV applications are desired in the engine compartment, power train, and brakes where the ambient temperature normally exceeds 150°C. Power converters (i.e. DC-DC converter, DC-AC inverter) inside the HEVs require Gate-Driver ICs to control the power switches....

متن کامل

Real Time Implementation of Induction Heating Principle using Full Bridge Inverter

The paper proposes an Induction Heating Principle using Full Bridge Inverter where a Single phase full bridge inverter consists of one rectifier, one capacitor, four mosfets and at the load side one induction heating rod is connected. So by this when any ac supply is given to the input side, we will get the square wave at the output side[1][3]. In this concept the induction heating rod is heate...

متن کامل

ذخیره در منابع من


  با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید

برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

ثبت نام

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

عنوان ژورنال:

دوره   شماره 

صفحات  -

تاریخ انتشار 2011